The BSS138 is an N-channel logic level enhancement mode MOSFET transistor widely used in low voltage and low current switching applications. It features low on-resistance, low input capacitance, and fast switching speed, making it suitable […]
Onsemi BSS138 Was Replaced By Topdiode’s BSS138 Read More »
The MOSFET packaging shell primarily serves to support, protect, and cool the device. Additionally, it provides electrical connections and isolation for the chip, thereby forming a complete circuit between the MOSFET device and other components.
Topdiode MOSFET packaging type and selection Read More »
The IRLML5203TRPBF P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and
Infineon’s MOSFET IRLML5203TRPBF was replaced by Topdiode’s TP3401D Read More »
Onsemi Transistor BSS84 General Description This P−channel enhancement−mode field−effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process minimizes on−state resistance and to provide rugged and reliable performance
The onsemi Transistor BSS84 was replaced by the Topdiode MMFTP84 Read More »
Infineon IGBT lRGP4640D International Rectifier has expanded its family of IGBTs with the introduction of the IRGP4640DPbF and IRGP4660DPbF. These devices are rugged and reliable, optimized for uninterruptible power supplies (UPS), solar induction heating, industrial
The Infineon IGBT lRGP4640D was replaced by the Topdiode IGBT TPS40N60T Read More »
In the world of electronic components, choosing the right transistor can significantly impact the performance and efficiency of a project. When considering alternatives for the widely used Diodes/NXP BSS123, the TOPDIODE BSS123 presents itself as
TOPDIODE BSS123 to replace Diodes/NXP BSS123 Read More »
Topdiode BSS84 is a nice alternative offer for On semi/Diodes MOSFET BSS84. Read more: MOSFET SOT-23 P-Channel BSS84-Topdiode TOPDIODE MOSFET SOT-23 P-Channel BSS84 Features: -60V,-170mA RDs(ON),<8.0 Ω @VGS=10V RDs ON,<10 Ω @VGS=4.5V Advanced Trench Technology
TOPDIODE BSS84 to replace onsemi/Diodes BSS84 Read More »
Infineon CoolMOS IPA60R190P6 CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction(SJ) principle. Topdiode Super-junction Power Mosfet TPC65R190FM serves as an excellent replacement for the Infineon CoolMOS IPA60R190P6. CoolMOS™
The Infineon CoolMOS IPA60R190P6 was replaced by the Topdiode TPC65R190FM Read More »
